Method for programming a reference cell

ABSTRACT

A method for programming one or more reference cells is described. The reference cell is programmed a predetermined amount, its program state is sensed relative to a prescribed cell on the same die (e.g., a memory cell or a golden bit cell), and the programming process continues until the reference cell fails a preselected read operation. In one preferred embodiment, the memory cell used during the reference cell programming process is the cell in the memory array having the highest native threshold value. In another preferred embodiment, the memory cell used during the reference cell programming process is a native cell that is on-board the die containing the memory array, but not a cell within the memory array.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to U.S. Ser. No. 11/413,962, filed Apr. 27,2006 entitled “Method For Programming a Reference Cell”, and U.S. Pat.No. 6,128,226, issued Oct. 3, 2000 entitled “Method and Apparatus forOperating with a Close to Ground Signal,” to U.S. Pat. No. 6,134,156,issued Oct. 17, 2000 entitled “Method for Initiating a RetrievalProcedure in Virtual Ground Arrays,’ to U.S. Pat. No. 6,535,434, issuedMar. 18, 2003 entitled “Architecture And Scheme For A Non-Strobed ReadSequence,” and U.S. Pat. No. 6,490,204, issued Dec. 3, 2002, entitled“Programming and Erasing Methods For A Reference Cell Of An NROM Array,”the foregoing patents and patent applications being incorporated byreference in their entireties as if set forth herein.

FIELD OF THE INVENTION

The present invention relates to sensing schemes for read operations onsemiconductor devices, and, more particularly, to a method forprogramming a reference cell for use in a read operation.

BACKGROUND OF THE INVENTION

Memory devices, such as random access memory (RAM), read-only memory(ROM), non-volatile memory (NVM) and like, are known in the art. Thesedevices provide an indication of the data which is stored therein byproviding an output electrical signal. A device called a sense amplifieris used for detecting the signal and determining the logical contentthereof. U.S. Pat. No. 4,916,671 to Ichiguchi describes one such senseamplifier.

In general, prior art sense amplifiers determine the logical valuestored in a cell by comparing the output of the cell with a fixedreference voltage level. The aforementioned U.S. Pat. Nos. 6,134,156and, 6,128,226 describe an alternative circuit architecture in which areference cell is used to generate a reference signal in lieu of a fixedreference voltage value.

When a memory cell is programmed or erased, the signal it generatesdiffers from the reference signal by some margin. Since reading thecell's state should always result the same (i.e., either programmed orerased depending on the cell's state), introducing such margin isnecessary to overcome imperfections in the reading process and tocompensate for drifts in the cell's threshold voltage (e.g., caused byretention loss or disturbs). A reduction in the original margin due toimperfections in the reading process (e.g., due to operation atdifferent operational conditions) is referred to as “margin loss.”

It is well understood that the placement of a reference signal to whichan array cell signal can be compared during sensing can be achieved in anumber of ways. When close to ground signals are sensed as in theaforementioned U.S. Pat. Nos. 6,134,156 and 6,128,226 patents, thereference cell signal develops at an intermediate rate between that of aprogrammed cell and an erased cell. When set this way, the array cells'signals on one side of the reference signal are determined to beprogrammed cells, while signals on the other side of the referencesignal are determined to be erased cells. For example, array cellsgenerating signals smaller than the reference signal are considered tobe programmed and array cells generating signals larger than thereference signal are considered to be erased. Conventionally, suchplacement is achieved by using a reference cell whose current is betweenthe erased and programmed cells' current levels. The reference cell'scurrent level can be controlled by the reference cell's size, itsprogramming level, or its gate voltage level. Furthermore, if voltagesignals are used to detect the cells' contents, then the referencesignal placement can be controlled by providing a different loadcapacitance on the reference cell compared to that of the array cells.However, if the array and the reference cells differ in their sizes, intheir operating gate voltages, or in their loads then some margin losswill be introduced to the sensing scheme. On the other hand, placing thereference cells' signals by properly programming the reference cells(while operating the array and reference cells at identical conditions)minimizes the sensing scheme sensitivity to operating conditions,process parameters and environmental conditions variations, therebyminimizing the margin loss, if any, that is introduced to the sensingsystem.

When reference cell placement is by programming, it must be programmed aprecise amount in order to achieve its intended purpose. There aredifficulties attendant with reliable programming of a reference cell soas to minimize operating margin loss, as well as accurate placement of aprogrammed reference cell relative to the memory array cells. Thepresent invention provides a method for programming reference cells tominimize margin loss and maximize cycling performance.

SUMMARY OF THE PRESENT INVENTION

The present invention provides a method for programming one or morereference cells, with the programming being performed relative to aprescribed cell on the same die as the reference cell (e.g., a memorycell or a golden bit cell).

According to one aspect of the invention, a method for programming areference cell for use in an integrated circuit memory having an arrayof memory cells each exhibiting a native threshold voltage value isdescribed. That method comprising the steps of first locating an addressfor the memory cell in the array that has the highest native thresholdvoltage value (VTNH). A reference cell is programmed a predeterminedamount and its program state is sensed relative to the VTNH memory cell.The programming and sensing steps are repeated until the sensing stepindicates that the reference cell has been programmed an amountsufficient to fail a first preselected read operation.

In a more particular methodology in accordance with this aspect of theinvention, the locating step can include the steps of iterativelyincreasing a gate voltage applied to the memory cells and performing thefirst preselected read operation at each such applied gate voltage untila final gate voltage is identified at which all the memory cells in thearray pass the first preselected read operation. Further, the firstpreselected read operation can exclude memory cells that have alreadypassed the first preselected read operation at a previously applied gatevoltage.

According to another aspect of the invention, a method for programming areference cell for use in an integrated circuit memory having aplurality of memory cells each exhibiting a native threshold voltagevalue is described. That method locates an address for the VTNH cell byapplying a first gate voltage value at which at least one memory cellfails a first preselected read operation and increasing the applied gatevoltage until a final gate voltage value is reached at which each of thememory cells can just pass the first preselected read operation. Thereference cell is programmed a predetermined amount and the programstate of the reference cell relative to the VTNH memory cell is sensedby performing a second preselected read operation on the reference cell.Tile programming and sensing steps are repeated until the sensing stepindicates that the reference cell has been programmed an amountsufficient to fail the second preselected read operation.

According to still another aspect of the invention, a method forprogramming a set of reference cells for use in performing respectiveread operations on an integrated circuit memory having a plurality ofmemory cells is described. That method locates the VTNH cell, determinesa placement for a reference voltage read signal relative to the VTNHcell, places a reference voltage erase verify signal relative to thereference voltage read signal, and places a reference voltage programverify signal relative to the reference voltage read signal.

The foregoing methods can have their sensing steps performed relative tothe VTNH memory cell and also relative to a native cell (a golden bitcell) on-board the same die.

The inventive method can be utilized to program a reference cell usedwith a memory array, a sliced array having one or more columns of memorycells, and redundant or auxiliary arrays.

These and other more specific aspects and features of the presentinvention can be appreciated from the accompanying Drawing Figures andDetailed Description of Certain Preferred Embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be understood and appreciated more fully fromthe following detailed description taken in conjunction with thedrawings in which:

FIG. 1 illustrates a spread of native threshold voltage values for anumber of memory cells on a die.

FIG. 2 illustrates target threshold voltage values for programmingreference cells in order to achieve exemplary and desired operatingmargins.

FIG. 2A illustrates a practical example of operating margins and apreferred sequence of steps to establish the operating margins relativeto a particular cell within the memory array.

FIG. 3A plots signal development through an array cell and a referencecell when both are driven by the same VCCR voltage supply.

FIG. 3B is the plot of FIG. 3A, showing the array cell being driven by atrimmed external supply voltage;

FIG. 3C is the plot of FIG. 3B, showing the reference cell at variousprogram states and the results of the read operations.

FIG. 4 illustrates an overall process for programming a selectedreference cell according to a first preferred method of the presentinvention.

FIG. 4A illustrates a process for locating the memory cell within amemory array having the highest native threshold voltage value (denoted“VTNH”) among the memory cells in the array.

FIG. 5 illustrates a process for programming a selected reference cellto a target value in accordance with the first preferred method.

FIG. 6 illustrates a process for more accurately determining thethreshold voltage of a reference cell placed in accordance with theembodiments of the present invention.

FIG. 7 illustrates a process for programming a reference cell relativeto another reference cell.

FIG. 8A plots signal development for a “golden bit” cell when driven bya trimmable external supply voltage, together with the VTNH cell and anexemplary reference cell.

FIG. 8B is the plot of FIG. 8A, showing the reference cell at variousprogram states relative to a golden bit's signal development that hasbeen placed using the trimmable external supply voltage and the resultsof various read operations.

DETAILED DESCRIPTION OF CERTAIN PREFERRED EMBODIMENTS

By way of overview and introduction, the present invention is describedin connection with a methodology for programming a reference cell toenable sensing of the contents of a memory cell from close to groundlevel. Such a memory array is described in the aforementioned U.S. Pat.No. 6,134,156 and U.S. application Ser. No. to be assigned, attorneydocket No. 2671/01010, filed on even date herewith, entitled“Architecture And Scheme For A Non-Strobed Read Sequence.” By using areference cell instead of a fixed threshold for comparison, a lowvoltage signal can be reliably processed irrespective of any changes intemperature or power supply level. The present invention hasapplicability to other sensing schemes, including A.C. and D.C. sensingtechniques, and with read operations from either the source or drainside of a transistor, as can be appreciated by those of skill in theart.

Reference is made to FIG. 1 which illustrates the memory array cellsnative threshold voltage distribution. The memory cells on the dieinclude both array cells that are addressed in a conventional manner,and additional cells such as auxiliary and reference cells that are usedfor a variety of purposes including quality control during manufacturingand read operations when the array cells are put into service. Thenative reference cells can lie anywhere along the threshold voltage (VT)axis. By way of example, the native threshold values for two referencecells are indicated as lying within the distribution curve, though thatis not required.

The methods of the present invention enable precision programming ofreference cells relative to a memory cell oil the die, for example,relative to an array cell, another reference cell, or to a golden bit.Each of these techniques defines a related but different methoddescribed herein with reference to a flow diagram of a preferredembodiment for each such technique. These techniques are performed aftermanufacturing the devices, prior to placing the memory array intoservice. Generally, there are a number of target threshold voltagevalues that are set in a corresponding number of reference cells as aresult of the reference cell programming process of the invention. Thatis to say, different types of read operations can be performed on thememory cell such as program verify, erase verify and operations in whichtemporary states of a cell in the progress of an erase or a programoperation should be detected. The basic difference presented by thesein-progress read cycles is the placement of the reference cell signal.Since the reference cell's state is not changed according to the type ofthe read operation, different reference cells should be used for each ofthese types of operations.

As illustrated in FIG. 2, target threshold voltage values are spacedrelative to one another by predetermined margins M1, M2, M3 and M4 whichare established to ensure reliable reads, read verifies, erase verifies,program verifies, or other read operations oil the array memory cells.To minimize margin loss and maximize product endurance and reliability,it is critical that the margins M1 . . . M4 provide a reliable bufferand a tight operating window. As well, it is essential that theplacement of the programmed reference cells is defined (at least for oneof the reference cells) relative to the array threshold voltages (VT)distribution.

FIG. 2 illustrates an example of the margins M1 . . . M4 established andpositioned relative to the memory cell in the array having the highestnative threshold value (“VTNH”). As will be appreciated from thediscussion below, the margins can be established and positioned relativeto any cell, such as the VTNH cell, a golden bit cell, or anotherreference cell.

FIG. 2A illustrates a practical example of the margins M1 . . . M4 thatcan be well defined using the techniques of the present invention. Fourmargins are illustrated: cycling margin (“CM”), erase margin (“EM”),retention margin (“XM”) and refresh margin (“FM”). These margins aremaintained between the reference cells, once their threshold voltagevalue have been programmed. In other words, the margins are controlledbased on the response of each reference cell when driven by a standardvoltage source VCCR. Since the reference programming procedure resultsin reference threshold voltages that may not be exactly as the originaltarget levels, it is necessary that the actual reference cells thresholdvoltages maintain the following margins:VT _(—) RD _(—) REF_actual−VTNH>=CM+EMVT _(—) RD _(—) REF_actual−VT _(—) EV _(—) REF_actual>=EMVT _(—) RV _(—) REF_actual−VT _(—) RD _(—) REF_actual>=XMVT _(—) PV _(—) REF_actual−VT _(—) RV _(—) REF_actual>=FMwhere VT_RD_REF_actual is the threshold voltage value of a referencecell programmed to implement a cell-contents read operation,VT_EV_REF_actual is the threshold voltage value of a reference cellprogrammed to implement an erase verify operation concerning thecontents of a cell, VT_RV_REF_actual is the threshold voltage value of areference cell programmed to implement a refresh verify operationconcerning the contents of a cell, and VT_PV_REF_actual is the thresholdvoltage value of a reference cell programmed to implement a programverify operation concerning the contents of a cell.

FIG. 2A also illustrates a preferred sequence of steps to establish theoperating margins relative to a particular cell within the memory array.The steps in FIG. 2A are shown relative to the VTNH cell, though othercells can be used such as the golden bit cell, as described below. Useof the VTNH cell facilitates discussion because it clearly illustratesthe relationship between the required threshold voltages to beprogrammed into the reference cells and the required operating margins.Thus, with reference to the VTNH cell, a reference cell is programmed tobe the RD_REF cell by programming it to have a margin M of CM+EM aboveVTNH. If a golden bit cell were used as the base line threshold voltage,then the margin M would most likely be greater by the difference betweenthe threshold voltage of the golden bit cell (V_OTPG) and the VTNH cell.

Next, another reference cell is programmed to be the erase verify cellby programming that cell to have a margin EM below the actual thresholdvoltage of the RD_REF cell, as can be appreciated from FIG. 2A.Likewise, the RV_REF cell can be programmed to be XM above the actualthreshold voltage of the RD_REF cell, and another cell is programmed tobe the PV_REF cell by programming it to have a margin FM above theactual threshold voltage of the RV_REF. It will be appreciated thatother arrangements of the reference cells' threshold voltages and of thesequence of programming the reference cells are possible and are part ofthe present invention. Furthermore, the placement of each reference cellcan be made relative to an array cell, a “golden” cell, or anotherreference cell.

When put into service, it is desirable to drive both the array cells'and the reference cells' gates with the same voltage supply VCCR duringall standard read operations. However, during reference programming, atrimmable external voltage supply (EXT_VCCR) driving the array cells'gates can be used to facilitate the reference cell programmingprocedure. The effect of trimming the external supply is illustrated inFIGS. 3A, 3B and 3C. In FIG. 3A, the development over time of voltagesignals from a given, native reference cell is plotted together with theVTNH cell when both are driven by VCCR. We can define a “pass read ‘1’”operation to be when the array cell has a greater signal than thereference cell and a “fail read ‘1’” operation to be when the array cellsignal is lower than the reference signal. For example, the result of aread operation between the native VTNH cell and the native referencecell shown in FIG. 3A will be “fail read ‘1’”.

In FIG. 3B, the gate voltage applied to the VTNH cell has been reducedby a margin M, and the lower gate voltage results in slower signaldevelopment in that cell. Consequently, when compared to VTNH driven atthe trimmed supply voltage level, the reference cell REF1 (driven by thestandard gate voltage VCCR) must be programmed further in order to failthe read ‘1’ operation. FIG. 3C illustrates the reference cell REF1 atvarious program states along the process of being programmed includingits native state in which it fails the read ‘1’ operation, an interimstate in which the cell REF1 has been partially programmed, yet stillfails the read ‘1’ operation, and a state in which the furtherprogrammed reference cell signal is smaller than the array cell's signaland so it passes the read ‘1’ test. At this last state, it is ensuredthat the threshold voltage of the reference cell has been raised by atleast the M margin.

A read operation or “sensing” of a cell can be performed as described inthe aforementioned, co-pending U.S. Pat. No. 6,535,434, issued Mar. 18,2003, entitled “Architecture And Scheme For A Non-Strobed ReadSequence,” which describes the steps taken to sense a close to groundsignal and other sensing methods (e.g., DC current sensing).

FIG. 4 illustrates the overall process for placing a selected referencecell with regard to a first preferred method of the present invention.At step 410, the VTNH memory cell within the memory cell array islocated. That cell is then used as a reference for verifying theprogramming of the selected reference cell, as indicated at step 420.All margins are then established with respect to the threshold voltagefor that cell, which is the highest threshold voltage of any cell in thememory array. This method places the VT for the selected reference cellby programming the cell in accordance with a prescribed criterion atstep 430. Generally, the criterion is that the VT for the reference cellis VTNH+M, where M is a prescribed margin. As a specific example, if theselected reference cell is the RD_REF cell, then M is CM+EM and targetreference cell VT is set to be greater than or equal to VTNH+CM+EM. Thereference cell is preferably programmed a predetermined amount untilplaced, as described in detail with regard to the flow diagrams of FIGS.5-8.

With reference now to FIG. 4A, step 410 of FIG. 4 for locating the VTNHcell proceeds by first setting an initial, low voltage level (EXT_VCCR)that is externally applied to the gates of respective memory cells, insuccession, as the array is parsed, as shown at step 450. Meanwhile, apredetermined gate voltage level such as the standard gate voltage levelat read, VCCR, is applied to the gate of the reference cell. It will berecalled that the reference cell has a similar structure (e.g., size,access path, environment, etc.) to the array cells and has a matchedload; thus, as was illustrated in FIG. 3B, the comparatively low voltageapplied to the gate of the still native array cells by EXT_VCCR at step452 causes the array cell to develop a smaller signal than the referencecell. The memory array is then parsed starting with a first array celladdress, as shown at step 454.

At a prescribed moment after applying these gate voltages, for example,as described in the aforementioned patent application entitled“Architecture And Scheme For A Non-Strobed Read Sequence,” a readoperation is performed on consecutive memory cells in the array againstthe reference cell (see step 456) until a fail-to-read-1 condition isdetected. Assuming that EXT_VCCR has been initially set to a low enoughvalue (e.g., 2 Volts), then the first read operation is expected to faila read ‘1’ operation, as tested at step 458, since both cells are nativeand are expected to have similar characteristics. If the read does notfail “read ‘1’” (i.e., it passes), then if the entire array has notalready been parsed, as tested at step 460, then the next array cell isselected at step 462 and the process is repeated, starting again at step456, until a fail read ‘1’ is detected. The address of the array cellthat failed the test is stored as well as the EXT_VCCR level, at step464. The voltage EXT_VCCR is increased at step 466, preferably by afixed small increment J (typically smaller than 100 mV), and, if thearray has not been completely parsed, as tested at step 468, this readoperation is repeated starting from the next array cell address at step470 until the fail read ‘1’ is detected (at step 458). On the otherhand, if the array has been completely parsed yet the present addresshas failed to read ‘1,’ then the die is considered as a bad die, and theoperator is advised of this at step 469. A bad die can also be detectedif the level of EXT_VCCR has been incremented beyond a prescribedmaximum, as shown at step 471. The maximum level for EXT_VCCR can beestablished based on empirical data for processing similar devices.

After an array cell address is stored at step 464 and a valid nextaddress is obtained at step 470, further addresses are examined todetermine whether EXT_VCCR must be incremented and to store a new arraycell address. As additional array cells, if any, fail the read ‘1’ testat step 458, the already stored address and EXT_VCCR level can bereplaced by the present address and EXT_VCCR level for the presentlyread array cell, and the EXT_VCCR level can be increased again, with theprocess continuing from the next array cell address, assuming there aremore addresses to parse (as tested at step 468).

As described above, if the read operation repeats starting at the laststored cell address and continues to pass the read ‘1’ operation at step458 then the last address of the array will eventually be reached, astested at step 460. Once the entire array has already parsed, the flowproceeds to step 480 at which point a test is made to ensure that thedie is not defective by examining the current setting for EXT_VCCR. IfEXT_VCCR is above an established minimum setting, then the last storedaddress is the VTNH memory cell address because it was the last cellthat failed to be read as a ‘1’. Also, the last stored level forEXT_VCCR is the V_VTNH level. These values are preserved for use inreference cell programming, as indicated at step 482. On the other hand,if EXT_VCCR is not above an established minimum level, the operator isadvised that the die is defective, as indicated at step 484.

This process enables each cell to be read only once, in other words, asingle parse of the array locates the VTNH memory cell address, asindicated at step 462. This is a preferred method although other flowsfor parsing the array can be used although they will probably result ina longer process due to the larger number of read operations (e.g., foreach EXT_VCCR level start the read operations at a specific firstaddress and parse the array till a fail read ‘1’ is detected).

The increment step of the EXT_VCCR supply in this process determines theaccuracy of the VTNH cell identification. Accuracy of identificationmeans that there is no cell in the array whose threshold voltage islarger than VTNH plus the EXT_VCCR increment step level, where VTNH isthe threshold voltage of the cell identified as the VTNH cell. Assumefor example that a 100 mV increment step is used. At the end of theprocess, the stored address indicates the cell that failed read ‘1’ atthe stored EXT_VCCR level. The remaining cells that were read in thenext loop of read cycles, applying to their gates the stored EXT_VCCRlevel plus the 100 mV increment step, pass the read ‘1’ test (otherwisethe address of the first failing one would have been stored). However,if a smaller increment step was used, for example 50 mV, then one ofthose remaining cells could have failed the read ‘1’ test. Thus, if amore accurate identification of the VTNH cell is required, then eitherone of the following two options can be adopted:

-   -   1. Use a smaller EXT_VCCR increment step for the whole process.    -   2. Use a coarse EXT_VCCR increment step for a first pass of the        whole array and a finer EXT_VCCR increment step for a second        pass of the cells starting at the stored VTNH cell address.

A separate aspect of this procedure is that a final voltage value forEXT_VCCR which is arrived at once the array has been parsed provides anindication as to whether the threshold voltage of the reference cell oran array cell is outside of a standard distribution of values. Thisvalue is therefore useful in determining the quality of the memoryarray. If at the end of the process the final EXT_VCCR level is thestarting level (EXT_VCCR_min) then this indicates that the referencecell threshold voltage is significantly larger than the array cells'threshold voltages. As well, by setting a maximum level for the EXT_VCCRsupply (EXT_VCCR_max), if this level is reached then it indicates thatthe reference cell threshold voltage is significantly lower than atleast one of the array cells' threshold voltages. Any indication of suchnon-standard distribution of threshold voltages can be used as a qualitycheck and as a basis for a decision such as to reject the part (steps469 and 484 in FIG. 4A).

Moreover, while the foregoing steps are operative to locate the VTNHmemory cell, they also can serve as a blank test for the memory array,in which all cells are read once, and so the locating process does notincrease the sort time during manufacturing.

Optionally, the final value of EXT_VCCR is stored, and, if desired, thevalue of EXT_VCCR at each cell at which a read ‘1’ operation fails canbe stored.

With reference now to FIG. 5, a process for programming a selectedreference cell REF1 to a target value in accordance with the firstpreferred method is described. At step 510, the VTNH cell, once located,is driven by a trimmable voltage source EXT_VCCR at a voltage value ofEXT _(—) VCCR=VCCR−Mwhere M is a prescribed margin suitable for the selected reference cell.For purposes of illustration, assume that the reference cell REF1 is theread reference cell RD_REF shown in FIG. 2A for whichM=CM+EM.Meanwhile, as indicated at step 520, the reference cell REF1 is drivenwith a standard supply voltage having a supply voltage value of VCCR. Asshould be appreciated, the trimmable voltage source EXT_VCCR permits theVTNH array cell signal to be temporarily placed at the target locationof the reference cell REF1 signal, by applying a reduced gate voltageduring this reference cell programming phase test as compared to theVCCR voltage ordinarily applied to the VTNH (and other array cells) whenthe memory cell is put into service.

At step 530, a program pulse is applied to the reference cell REF1. Atest is then made at step 540 to determine whether the result of a readoperation of the VTNH cell (driven by the trimmed gate voltage EXT_VCCR) against the reference cell REF1 (driven by the standard gate voltageat read, VCCR) is PASS read ‘1’ or FAIL. This test is performed bysensing the program state of the reference cell relative to the VTNHcell (driven by the trimmed gate voltage EXT_VCCR) preferably using thestandard sensing scheme that is used when the device is put intoservice. If it does not pass “read ‘1’”, then the reference cell has notbeen programmed to the location at which the VTNH cell signal has beentemporarily placed (by the trimmed gate voltage EXT_VCCR), and furtherprogramming pulses are required. The process loops back to step 530 sothat an additional program pulse can be applied, and then a read test asat step 540 is again performed. The program pulses can be applied in afixed increment (i.e., a predetermined amount), or an algorithm can beemployed to enhance the process. For one suitable algorithm, see U.S.application Ser. No. to be assigned (Attorney/Docket No. P-2448-US2,filed on even date herewith, entitled “Programming and Erasing Methodsfor A Reference Cell of An NROM Array,” which application is acontinuation-in-part application of U.S. application Ser. No.09/730,586, filed Dec. 7, 2000, which is a continuation-in-partapplication of U.S. Ser. No. 09/563,923, filed May 4, 2000. The processflow ends when the test at step 540 indicates that the reference cellREF1 has been placed at the target location, that is, when it has beenprogrammed an amount sufficient to pass the read ‘1’ test.

The incremental programming of the reference cell REF1 is illustrated inFIG. 3C, in which the VTNH cell is driven by the trimmed gate voltageEXT_VCCR (step 510) while an initially native reference cell REF1 isdriven by the standard gate voltage at read (step 520). The initiallynative reference cell REF1 exhibits signal development that is much morerapid than that of the VTNH cell, as shown by the curve “VREF1(native)”, when the cells are driven with such applied gate voltages.That curve fails to read ‘1,’ and so the process of FIG. 5 continues byapplying one or more program pulses to the reference cell REF1 at step530. These program pulses have the effect of partially programming thereference cell and reducing its rate of signal development. That isreflected in the curve “VREF1 (partial PGM'ing)”, which also fails toread ‘1.’ Consequently, additional program pulses are applied at step530 and the test at step 540 is repeated, and this loop continues untila PASS read ‘1’ is detected, namely, when the signal development at thereference cell REF1 is akin to the curve “VREF1 (done PGM'ing)”. Ofcourse, different tests can be arranged to provide a boundary conditionto gauge when to stop programming the reference cell (e.g., externalread of the cells currents, or other tests).

The process flow of FIG. 5 permits the reference cell REF1 to bepositioned in the vicinity of the target; however, since each programpulse increments the VT of the reference cell by a predetermined amount,the actual VT of the reference cell after being programmed by theprocess flow of FIG. 5 is typically above the target level.Consequently, if further reference cells REF2 . . . REFx are to beprogrammed relative to the VT of that reference cell REF1, e.g.,relative to the RD_REF reference cell, then knowledge of the actuallevel of the REF1 threshold voltage, e.g., VT_RD_REF_actual, may bedesired. The VT level of the reference cell REF1 relative to the VTNHcell can be refined by iteratively decreasing EXT_VCCR starting fromEXT_VCCR=VCCR−M by a controlled amount which is a smaller value than theVT increment as a result of a programming pulse.

FIG. 6 illustrates a process flow for refining the position of referencecell REF1. It should be understood that the just-programmed referencecell itself is not being partially erased, but rather the trimmablevoltage source EXT_VCCR is adjusted so that the actual VT of thereference cell REF1 can be more accurately determined.

At step 610, the VTNH cell is driven with EXT_VCCR, that is with thevoltage value that was applied at step 510 described above. Namely,EXT _(—) VCCR=VCCR−MMeanwhile, at step 620, the reference cell REF1 is driven with astandard gate voltage VCCR. At step 630, a counter N is set to zero foruse in flow of FIG. 6 to monitor the number of times that the trimmablevoltage source has been trimmed a prescribed amount. Other techniquescan be used as will be appreciated for tracking the number ofadjustments or the overall adjustment to the voltage source EXT_VCCR.

At step 640, the voltage value of EXT_VCCR is decreased by a prescribedamount K, which amount is preferably 50 mV or less, and at step 650 thecounter N is incremented. At step 660 the VTNH array cell is readagainst the reference cell REF1 and a test is made to determine whetherthe result is PASS read ‘1’. It is expected that in the first loop thatthe VTNH cell will pass this test, with the process flow looping to step640 to again decrease the voltage value of EXT_VCCR and then increasethe counter N (at step 650). Ultimately, however, EXT_VCCR will bereduced such that the VTNH cell no longer passes the read ‘1’ test, and,at that point, the actual VT of the reference cell REF1 is determined atstep 670 to be:VT _(—) REF1_actual=VTNH+VCCR−EXT _(—) VCCR   (1)Expressed another way, the actual VT of the reference cell REF1 is:VT_REF1_actual=VTNH+M+N*K,where N is the number of loops in which the voltage value emanating fromthe EXT_VCCR source was decreased by the constant amount K.

A further process flow can be used in like manner to increment EXT_VCCRfrom its new-found value to a higher value by selecting a new voltageinterval E, where E<K (e.g., E is 25 mV or less). Yet a further processflow can again decrement EXT_VCCR, and so on, to more accurately placethe threshold voltage of the reference cell REF1.

With reference now to the flow diagram of FIG. 7, the steps taken forprogramming further reference cells REF2 . . . REFx relative to thereference cell REF1 is described. Preferably, the actual thresholdvoltage of the reference cell REF1 has been identified through theprocess flow of FIG. 6. In this first preferred embodiment, thereference cells are located relative to the VTNH cell, which was locatedin connection with the process flow of FIG. 4, described above.

The threshold voltage for the reference cell REF2 is to be placed at:VT _(—) REF2=VT _(—) REF1_actual+M2,  (2)where M2 is the margin between REF1 and REF2. M2 can be positive ornegative. If the threshold voltage of the reference cell REF2 is lowerthan that of the reference cell REF1, then M2 is a positive voltagevalue; otherwise, M2 is a negative voltage value. For example, if REF1is the RD_REF cell and REF2 is the RV_REF cell, then the margin M2 isXM, as shown in FIG. 2A. For the EV_REF cell in FIG. 2A a negative M2margin (EM) should be used. Using equation (1) to solve equation (2) forEXT_VCCR, we see thatEXT _(—) VCCR=VCCR−VT_REF1_actual+VTNH−M2EXT _(—) VCCR=VCCR−M1−N*K−M2Where, M1 is the original target margin of the REF1 reference cell, N*Kis the amount of over programming introduced to the REF1 cell past theoriginal target, and M2 is a positive or negative target margin betweenthe REF1 and REF2 threshold voltages.

For example, if REF2 to be programmed relative to REF1 is the EV_REFcell shown in FIG. 2A then M2=EM, i.e., a negative margin. Similarly, ifREF2 is the RV_REF cell shown in FIG. 2A then M2=XM, i.e., a positivemargin.

Thus, to place REF2 relative to REF1, the gate of the VTNH cell isdriven by EXT_VCCR while the gate of REF2 is driven by the standardvoltage VCCR, as indicated at steps 710 and 720, respectively. At step730, a program pulse of a predetermined amount is applied to thereference cell REF2 to move it from its native state and place it at itstarget programmed state relative to REF1. The cell REF2 is being placedrelative to REF1 by sensing its value relative to the VTNH cell, whilethe VTNH cell is driven by a gate voltage which places the VTNH signaltaking into account the actual placement of REF1 and the required marginbetween the respective VTs of REF1 and REF2. At step 740, the partiallyprogrammed reference cell REF2 is tested to see if it still passes aread ‘1’ test, in which case it has not been sufficiently programmed toplace it M2 from the reference cell REF1. If the cell fails the read ‘1’test, as is initially expected since both cells are essentially native,then a further program pulse is applied at step 730 and the test at step740 is repeated until the reference cell REF2 fails the read ‘1’ test.At that point, the target placement for REF2 has been achieved.

As described above in connection with the target programming of thereference cell REF1, a more accurate location of the actual placement ofthe reference cell REF2 can be achieved using a process flow as in FIG.6, this time applied to the reference cell REF2 and this time settingthe actual VT at step 650 to be:VT _(—) REF2=VTNH+M1+N1*K+M2+N2*K.This refinement may be necessary if the reference cell REF2 is to beused for placing yet a further reference cell, or for other purposes,such as accurate monitoring of the reference cell retention loss afterbake.

Further programming of reference cells will follow one of the flowsdescribed above, depending if they are programmed relative to the VTNHcell or relative to another, already programmed, reference cell.

It is know in the art that, after manufacturing, memory devices aretested to detect malfunctioning or marginal devices. As part of thesetests the array cells may be programmed and then the device isintroduced to a relatively high temperature cycle. After this hightemperature cycle, the threshold voltage of the array cells may drop bysome amount. This threshold voltage drop is known as the “retentionloss.” Since the reference cells are also programmed, their thresholdvoltage may also drop by some amount (which may be different than thatof the array cells due to differences in the programming levels of thearray cells and the reference cells). Since the threshold voltages ofall the programmed memory cells are affected, whether a reference cellor an array cell (including the VTNH cell), there is no relative way todetermine the cell's state. A non-relative way to determine the cellsthreshold voltage state, such as by an external measurement of the cellscurrents, is very expensive in terms of test time. Thus, an internalrelative measurement of the array cells and the reference cellsthreshold voltages is desired.

A native cell which has never been programmed and which is on-board thesame die is utilized to provide an internal relative measurement, inaccordance with another aspect of the present invention. This nativecell, referred to herein as a “golden cell” or “golden bit,” permits theinternal read mechanism to be used not only for the reference cells'programming flow as described above in connection with FIGS. 4-7, butalso for detection of array cell and reference cell threshold voltagechanges after a high temperature cycle. The process flows describedabove can each be modified such that the reference cells' signalplacements are performed relative to this golden bit in conjunction withthe native cell having the maximum threshold voltage (that is, the VTNHcell). Now, even after a high temperature cycle, the reference cells'threshold voltages can be re-estimated against the golden bit becausethe threshold voltage of this unprogrammed (native) cell does not changeas a result of any high temperature cycle(s).

The golden bit is a memory cell having the same size, the sameenvironment, similar loads and matched or similar access paths as anarray memory cell. However, the golden bit is usually not among thememory cells in the memory array, but rather is typically included in anauxiliary array. Referring back to FIG. 4A, the process flow forlocating the VTNH cell, the V_VTNH voltage level found at step 462 isthe EXT_VCCR level at which the VTNH cell signal just passed a read ‘1’(i.e., became higher than) the reference cell signal. FIG. 8A plotssignal development for the golden bit cell when driven by the trimmableexternal supply EXT_VCCR, together with the VTNH cell and an exemplaryreference cell. In particular, the native golden bit signal can beplaced by trimming the voltage applied to its gate using a methodsimilar to that of FIG. 4A for finding V_VTNH. The voltage value of atrimmable gate voltage source EXT_VCCR is adjusted until the golden bitjust passes a read ‘1’ test, and that defines the value of V_GB. Thedifference D between the gate voltages applied to the VTNH cell and thegolden bit cell,D _(VTNH-GB) =V _(—) VTNH−V _(—) GBcan be used to program the reference cells and to now determine theactual threshold voltages of the programmed reference cells relative tothe golden bit instead of the VTNH cell. As shown in FIG. 8B, referencecells can be programmed relative to the golden bit using a targetthreshold voltage level of:VT _(—) REF1=VTNH+M1.The method consists of placing the golden bit signal at the target placeof the programmed reference cell, applying a programming pulse to thereference cell, and reading the contents of the cell to determine itscontents. These steps are repeated until a PASS read ‘1’ is detected, asdescribed above in connection with FIGS. 4-7. Thus, the flow is asdescribed above for programming the reference cell using the VTNH cell,except that in the previous discussion the VTNH cell signal was placedat the target place of the programmed reference cell whereas now thegolden bit cell's signal is placed at the target place of the programmedreference signal. The golden bit cell's signal is placed by driving itsgate withEXT _(—) VCCR=VCCR−M1−D _(VTNH-GB).Preferably, the reference cells are contained in a reference unit whichincludes a selector that can select which of several reference cells touse for a given operation, wherein each reference cell is programmed asdescribed above to a prescribed level. Further details concerning theuse of a selector and multiple reference cells can be found in theaforementioned U.S. patent application Ser. No. to be assigned, attorneydocket No. 2671/01148, filed on even date herewith, entitled “Method ForSelecting a Reference Cell.”

If the reference cells are NROM cells, they can be used as either singleor two bit cells. When used as single bit cells one of the two bits inthe cell is programmed as explained above while the other bit can bemaintained native, programmed or erased. On the other hand, if the twobits of the NROM reference cell are used as references, then each ofthem is programmed as explained above.

Persons skilled in the art will appreciate that the present invention isnot limited to what has been particularly shown and describedhereinabove. Rather the scope of the present invention is defined onlyby the claims which follow.

1. A method of programming a set of reference cells, wherein eachreference cell is associated with a separate set of non-volatile memorycells, said method comprising: programming a first reference cell withinthe set of reference cells as a function of a native threshold voltagedistribution of a first set of non-volatile memory cells; andprogramming a second reference cell as a function of a native thresholdvoltage distribution of a second set of non-volatile memory cells. 2.The method according to claim 1, further comprising programming a secondset of reference cells such that a reference cell in the second set isprogrammed as a function of a threshold voltage of a cell in the firstset of reference cells.
 3. The method according to claim 1, wherein thefirst reference cell is programmed to a threshold voltage substantiallycorrelated with a highest native threshold voltage of a non-volatilememory cell in the first set of non-volatile memory cells.
 4. The methodaccording to claim 3, wherein the first reference cell is programmed toa threshold voltage at a predefined offset above a highest nativethreshold voltage of a non-volatile memory cell in the first set ofnon-volatile memory cells.
 5. The method according to claim 3, whereinthe second reference cell is programmed to a threshold voltagesubstantially correlated with a highest native threshold voltage of anon-volatile memory cell in the second set of nonvolatile memory cells.6. The method according to claim 5, wherein the second reference cell isprogrammed to a threshold voltage at a predefined offset above a highestnative threshold voltage of a non-volatile memory cell in the second setof non-volatile memory cells.
 7. The method according to claim 6,further comprising programming a third reference cell as a function of anative threshold voltage distribution of a third set of non-volatilememory cells.
 8. A non-volatile memory device comprising: two or moresets of non-volatile memory cells; and a first set of reference cells,wherein each reference cell is associated with a separate set ofnon-volatile memory cells and programmed as a function of a nativethreshold voltage distribution of the set of non-volatile memory cellswith which it is associated.
 9. The non-volatile memory device of claim8 further comprising a second set of reference cells such that areference cell in said second set is programmed as a function of athreshold voltage of a cell in said first set of reference cells. 10.The device according to claim 8, wherein the first reference cell isprogrammed to a threshold voltage substantially correlated with ahighest native threshold voltage of a non-volatile memory cell in thefirst set of nonvolatile memory cells.
 11. The method according to claim10, wherein the first reference cell is programmed to a thresholdvoltage at a predefined offset above a highest native threshold voltageof a non-volatile memory cell in the first set of non-volatile memorycells.
 12. The method according to claim 10, wherein the secondreference cell is programmed to a threshold voltage substantiallycorrelated with a highest native threshold voltage of a non-volatilememory cell in the second set of non-volatile memory cells.
 13. Themethod according to claim 12, wherein the second reference cell isprogrammed to a threshold voltage at a predefined offset above a highestnative threshold voltage of a non-volatile memory cell in the second setof non-volatile memory cells.
 14. The method according to claim 13,further comprising programming a third reference cell as a function of anative threshold voltage distribution of a third set of non-volatilememory cells.
 15. A non-volatile memory device comprising: two or moresets of non-volatile memory cells; and a first set of reference cells,wherein each reference cell is associated with a separate set ofnon-volatile memory cells and wherein a majority of reference cells areprogrammed at a threshold voltage different from one another.
 16. Thenon-volatile memory device of claim 15 further comprising a second setof reference cells such that a reference cell in said second set isprogrammed as a function of a threshold voltage of a cell in said firstset of reference cells.
 17. A non-volatile memory device comprising atleast one set of non-volatile memory cells; and a set of referencecells, wherein at least one reference cell is programmed as a functionof a native threshold voltage distribution of at least one set ofnonvolatile memory cells.
 18. The non-volatile memory device of claim17, wherein at least one reference cell in said set of reference cellsis programmed as a function of a threshold voltage of another referencecell in said set of reference cells.
 19. A non-volatile memory devicecomprising at least one set of nonvolatile memory cells; and a set ofreference cells, wherein at least two of the reference cells in the setare programmed to different levels.
 20. The nonvolatile memory device ofclaim 19, wherein said different levels are a function of the nativethreshold voltage distribution of said at least one set of non-volatilememory cells.
 21. The non-volatile memory device of claim 19, whereinsaid different levels may be detected by measuring the voltage orcurrent signals generated by said at least two of the reference cells.